发明授权
- 专利标题: Methods of and apparatus for making high aspect ratio microelectromechanical structures
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申请号: US10271574申请日: 2002-10-15
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公开(公告)号: US07288178B2公开(公告)日: 2007-10-30
- 发明人: Adam L. Cohen , Gang Zhang , Qui T. Le , Michael S. Lockard , Dennis R. Smalley
- 申请人: Adam L. Cohen , Gang Zhang , Qui T. Le , Michael S. Lockard , Dennis R. Smalley
- 申请人地址: US CA Van Nuys
- 专利权人: Microfabrica, Inc.
- 当前专利权人: Microfabrica, Inc.
- 当前专利权人地址: US CA Van Nuys
- 代理商 Dennis R. Smalley
- 主分类号: C25D5/00
- IPC分类号: C25D5/00 ; C25D5/02
摘要:
Various embodiments of the invention provide techniques for forming structures (e.g. HARMS-type structures) via an electrochemical extrusion process. Preferred embodiments perform the extrusion processes via depositions through anodeless conformable contact masks that are initially pressed against substrates that are then progressively pulled away or separated as the depositions thicken. A pattern of deposition may vary over the course of deposition by including more complex relative motion between the mask and the substrate elements. Such complex motion may include rotational components or translational motions having components that are not parallel to an axis of separation. More complex structures may be formed by combining the electrochemical extrusion process with the selective deposition, blanket deposition, planarization, etching, and multi-layer operations of a multi-layer electrochemical fabrication process.
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