发明授权
US07288844B2 Semiconductor device, semiconductor circuit and method for producing semiconductor device
失效
半导体装置，半导体电路及半导体装置的制造方法
- 专利标题： Semiconductor device, semiconductor circuit and method for producing semiconductor device
- 专利标题（中）： 半导体装置，半导体电路及半导体装置的制造方法
-
申请号： US10518157申请日： 2003-06-11
-
公开(公告)号： US07288844B2公开(公告)日： 2007-10-30
- 发明人: Takashi Nakano , Hirokazu Tohya
- 申请人： Takashi Nakano , Hirokazu Tohya
- 申请人地址： JP Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 优先权： JP2002-170840 20020612
- 国际申请： PCT/JP03/07397 WO 20030611
- 国际公布： WO03/107445 WO 20031224
- 主分类号： H01L29/40
- IPC分类号： H01L29/40
摘要：
The present invention is provided with a transmission line element having a ground wiring and a power supply wiring formed interposing an insulating film, on the power supply wiring on a semiconductor chip, lead or printed-circuit board, such that the capacitance per unit length of the transmission line element is boosted to set the characteristic impedance of the transmission line element for the high frequency range to an optimum value. In this way, the power supply wiring inclusive of the transmission line element can have a satisfactory decoupling performance.
公开/授权文献
信息查询
IPC分类:
