发明授权
- 专利标题: Sub-milliohm on-chip interconnection
- 专利标题(中): 亚毫欧片上互连
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申请号: US10403439申请日: 2003-03-31
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公开(公告)号: US07291551B2公开(公告)日: 2007-11-06
- 发明人: Wolfgang Jörger , Achim Stellberger , Michael Keller
- 申请人: Wolfgang Jörger , Achim Stellberger , Michael Keller
- 申请人地址: DE Kirchheim/Teck-Nabern
- 专利权人: Dialog Semiconductor GmbH
- 当前专利权人: Dialog Semiconductor GmbH
- 当前专利权人地址: DE Kirchheim/Teck-Nabern
- 代理机构: Saile Ackerman LLC
- 代理商 Stephen G. Ackerman; Rosemary L.S. Pike
- 优先权: EP01640005 20011029
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method to form a very low resistivity interconnection in the manufacture of an integrated circuit device is achieved. A bottom conductive layer is formed overlying a substrate. The bottom conductive layer creates a first electrical coupling of a first location and a second location of the integrated circuit device. A dielectric layer is formed overlying the bottom conductive layer. A top conductive layer is formed overlying the dielectric layer. The top conductive layer is coupled to the bottom conductive layer through openings in the dielectric layer to form a second electrical coupling of the first location and the second location. A metal wire is bonded to the top conductive layer to form a third electrical coupling of the first location and the second location to complete the very low resistivity interconnection in the manufacture of the integrated circuit device.
公开/授权文献
- US20030190774A1 Sub-milliohm on-chip interconnection 公开/授权日:2003-10-09