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US07291556B2 Method for forming small features in microelectronic devices using sacrificial layers 失效
在使用牺牲层的微电子器件中形成小特征的方法

Method for forming small features in microelectronic devices using sacrificial layers
摘要：
A dielectric layer is formed on a region of a microelectronic substrate. A sacrificial layer is formed on the dielectric layer, and portions of the sacrificial layer and the dielectric layer are removed to form an opening that exposes a portion of the region. A conductive layer is formed on the sacrificial layer and in the opening. Portions of the sacrificial layer and the conductive layer on the dielectric layer are removed to leave a conductive plug in the dielectric layer and in contact with the region. Removal of the sacrificial layer and portions of the conductive layer on the dielectric layer may include polishing to expose the sacrificial layer and to leave a conductive plug in the sacrificial layer and the dielectric layer, etching the sacrificial layer to expose the dielectric layer and leave a portion of the conductive plug protruding from the dielectric layer, and polishing to remove the protruding portion of the conductive plug. Phase-change memory devices formed by such techniques are also discussed.
摘要（中）：

在微电子基板的区域上形成介电层。 在电介质层上形成牺牲层，去除牺牲层和电介质层的部分以形成露出该区域的一部分的开口。 在牺牲层和开口中形成导电层。 去除部分牺牲层和电介质层上的导电层，以在电介质层中留下导电插塞并与该区域接触。 消除牺牲层和电介质层上的导电层的部分可以包括抛光以暴露牺牲层并且在牺牲层和电介质层中留下导电插塞，蚀刻牺牲层以暴露电介质层并留下 导电插头从电介质层突出的部分，并且抛光以去除导电插塞的突出部分。 还讨论了通过这种技术形成的相变存储器件。

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