发明授权
US07292612B2 Semiconductor laser drive apparatus, optical write apparatus, imaging apparatus, and semiconductor laser drive method
有权
半导体激光驱动装置,光写入装置,成像装置和半导体激光驱动方法
- 专利标题: Semiconductor laser drive apparatus, optical write apparatus, imaging apparatus, and semiconductor laser drive method
- 专利标题(中): 半导体激光驱动装置,光写入装置,成像装置和半导体激光驱动方法
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申请号: US10757390申请日: 2004-01-15
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公开(公告)号: US07292612B2公开(公告)日: 2007-11-06
- 发明人: Kenichi Ono
- 申请人: Kenichi Ono
- 申请人地址: JP Tokyo
- 专利权人: Ricoh Company, Ltd.
- 当前专利权人: Ricoh Company, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2003-010205 20030117
- 主分类号: H01S3/00
- IPC分类号: H01S3/00
摘要:
A semiconductor laser drive apparatus and method are disclosed in order to obtain an optimal laser emission pulse that can reduce inherent light emission that may cause fogging and degradation of a photoconductor and also reduce turn on delay. Specifically, a light emission command signal is delayed at a delay unit based on a delay control signal so that a modulation signal is output. The light emission command signal and the delay signal are logically added to a command signal from an external source at a threshold signal generation unit so that a threshold ON signal is output. The modulation signal and the threshold ON signal respectively drive a modulation current switch and a threshold current switch so that a semiconductor laser drive current is generated. The threshold current is sampled according to a sample hold signal supplied from an external source and APC is performed on the sampled threshold current. In a differential quantum efficiency detection unit, an operation of determining differential quantum efficiency based on a current for obtaining a predetermined amount of light and a current for obtaining a portion of the predetermined amount of light is performed, and a light emission current is calculated. By adding the calculated light emission current and an arbitrary current that may be externally set, a modulation current for switching the semiconductor laser can be obtained.
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