Invention Grant
- Patent Title: Alkylsilanes as solvents for low vapor pressure precursors
- Patent Title (中): 烷基硅烷作为低蒸气压前体的溶剂
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Application No.: US11456259Application Date: 2006-07-10
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Publication No.: US07293569B2Publication Date: 2007-11-13
- Inventor: Ravi Laxman , Ashutosh Misra , Jean-Marc Girard
- Applicant: Ravi Laxman , Ashutosh Misra , Jean-Marc Girard
- Applicant Address: US TX Houston
- Assignee: Air Liquide Electronics U.S. LP
- Current Assignee: Air Liquide Electronics U.S. LP
- Current Assignee Address: US TX Houston
- Agent Brandon Clark
- Main IPC: B08B9/00
- IPC: B08B9/00

Abstract:
Compositions and methods for cleaning deposition systems utilizing alkylsilanes are described herein. In an embodiment, a method of cleaning a semiconductor fabrication system comprises flushing the system with a solvent comprising at least one alkylsilane. In another embodiment, a method of removing at least one chemical precursor from a semiconductor fabrication system comprises forcing a solvent containing at least one alkylsilane through the semiconductor fabrication system and dissolving the at least one chemical precursor in the solvent. The solvent may also contain mixtures of different alkylsilanes and other organic solvents.
Public/Granted literature
- US20070131252A1 Alkylsilanes As Solvents For Low Vapor Pressure Precursors Public/Granted day:2007-06-14
Information query
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