发明授权
- 专利标题： Method of forming contact
- 专利标题（中）： 形成接触的方法
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申请号： US11164480申请日： 2005-11-24
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公开(公告)号： US07294572B2公开(公告)日： 2007-11-13
- 发明人: Chao-Lon Yang , Neng-Kuo Chen , Teng-Chun Tsai , Chien-Chung Huang , Shao-Ta Hsu
- 申请人： Chao-Lon Yang , Neng-Kuo Chen , Teng-Chun Tsai , Chien-Chung Huang , Shao-Ta Hsu
- 申请人地址： TW Hsinchu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Jianq Chyun IP Office
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method of forming a contact is provided. A substrate having at least two conductive devices is provided. A spacing is located between the two conductive devices. A first dielectric layer is formed over the substrate to cover the two conductive devices and the spacing. A seam is formed in the first dielectric layer within the spacing. Then, a portion of the first dielectric layer is removed to form an opening so that the width of the seam is expanded. A second dielectric layer is formed over the first dielectric layer to fill the opening. A portion of the second dielectric layer and a portion of the first dielectric layer within the spacing are removed until a portion of the surface of the substrate is exposed and a contact opening is formed in the location for forming the contact. Finally, conductive material is deposited to fill the contact opening.
公开/授权文献
- US20070117375A1 METHOD OF FORMING CONTACT 公开/授权日：2007-05-24
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