发明授权
US07295465B2 Thin film magnetic memory device reducing a charging time of a data line in a data read operation
有权
薄膜磁存储器件在数据读取操作中减少数据线的充电时间
- 专利标题: Thin film magnetic memory device reducing a charging time of a data line in a data read operation
- 专利标题(中): 薄膜磁存储器件在数据读取操作中减少数据线的充电时间
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申请号: US11374062申请日: 2006-03-14
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公开(公告)号: US07295465B2公开(公告)日: 2007-11-13
- 发明人: Hiroaki Tanizaki , Hideto Hidaka , Tsukasa Ooishi
- 申请人: Hiroaki Tanizaki , Hideto Hidaka , Tsukasa Ooishi
- 申请人地址: JP Tokyo JP Tokyo
- 专利权人: Renesas Technology Corp.,Mitsubishi Electric Engineering Company Limited
- 当前专利权人: Renesas Technology Corp.,Mitsubishi Electric Engineering Company Limited
- 当前专利权人地址: JP Tokyo JP Tokyo
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2002-121150 20020423
- 主分类号: G11C11/14
- IPC分类号: G11C11/14
摘要:
During data reading, a sense enable signal is activated to start charging of a data line prior to formation of a current path including the data line and a selected memory cell in accordance with row and column selecting operations. Charging of the data line is completed early so that it is possible to reduce a time required from start of the data reading to such a state that a passing current difference between the data lines reaches a level corresponding to storage data of the selected memory cell, and the data reading can be performed fast.
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