发明授权
US07295465B2 Thin film magnetic memory device reducing a charging time of a data line in a data read operation 有权
薄膜磁存储器件在数据读取操作中减少数据线的充电时间

Thin film magnetic memory device reducing a charging time of a data line in a data read operation
摘要:
During data reading, a sense enable signal is activated to start charging of a data line prior to formation of a current path including the data line and a selected memory cell in accordance with row and column selecting operations. Charging of the data line is completed early so that it is possible to reduce a time required from start of the data reading to such a state that a passing current difference between the data lines reaches a level corresponding to storage data of the selected memory cell, and the data reading can be performed fast.
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