Invention Grant
US07296458B2 Nickel-coated free-standing silicon carbide structure for sensing fluoro or halogen species in semiconductor processing systems, and processes of making and using same
有权
用于在半导体处理系统中感测氟或卤素物质的镀镍独立碳化硅结构，以及制造和使用它们的方法
- Patent Title: Nickel-coated free-standing silicon carbide structure for sensing fluoro or halogen species in semiconductor processing systems, and processes of making and using same
- Patent Title (中): 用于在半导体处理系统中感测氟或卤素物质的镀镍独立碳化硅结构，以及制造和使用它们的方法
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Application No.: US10784606Application Date: 2004-02-23
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Publication No.: US07296458B2Publication Date: 2007-11-20
- Inventor: Frank Dimeo, Jr. , Philip S. H. Chen , Ing-Shin Chen , Jeffrey W. Neuner , James Welch
- Applicant: Frank Dimeo, Jr. , Philip S. H. Chen , Ing-Shin Chen , Jeffrey W. Neuner , James Welch
- Applicant Address: US CT Danbury
- Assignee: Advanced Technology Materials, Inc
- Current Assignee: Advanced Technology Materials, Inc
- Current Assignee Address: US CT Danbury
- Agency: Intellectual Property/Technology Law
- Agent Vincent K. Gustafson; Maggie Chappuis
- Main IPC: G01N7/00
- IPC: G01N7/00
Abstract:
A (MEMS)-based gas sensor assembly for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. Such gas sensor assembly in a preferred embodiment comprises a free-standing silicon carbide support structure having a layer of a gas sensing material, preferably nickel or nickel alloy, coated thereon. Such gas sensor assembly is preferably fabricated by micro-molding techniques employing sacrificial molds that are subsequently removable for forming structure layers.
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