发明授权
- 专利标题： Highly bright mechanoluminescence material and process for producing the same
- 专利标题（中）： 高亮度机械发光材料及其制造方法
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申请号： US10519936申请日： 2003-07-11
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公开(公告)号： US07297295B2公开(公告)日： 2007-11-20
- 发明人: Chao-Nan Xu , Morito Akiyama , Wensheng Shi
- 申请人： Chao-Nan Xu , Morito Akiyama , Wensheng Shi
- 申请人地址： JP Saitama JP Tokyo
- 专利权人： Japan Science and Technology Agency,National Institute of Advanced Science and Technology
- 当前专利权人： Japan Science and Technology Agency,National Institute of Advanced Science and Technology
- 当前专利权人地址： JP Saitama JP Tokyo
- 代理机构： Wenderoth, Lind & Ponack, L.L.P.
- 优先权： JP2002-203781 20020712
- 国际申请： PCT/JP03/08853 WO 20030711
- 国际公布： WO2004/007637 WO 20040122
- 主分类号： C09K11/88
- IPC分类号： C09K11/88 ; G01L1/24
摘要：
A novel highly bright mechanoluminescence material free from decay of luminescence brightness even if repeated stress is applied, comprising a composite semiconductor crystal of the general formula xM1A1.(1-x)M2A2 (wherein each of M1 and M2 independently represents an atom selected from among Zn, Mn, Cd, Cu, Eu, Fe, Co, Ni, Mg and Ca, and each of A1 and A2 is an atom independently selected from among chalcogens, provided that M1A1 is different from M2A2; and x is a positive number less than 1); and a process for producing the same.