发明授权
- 专利标题: Image transfer process for thin film component definition
- 专利标题(中): 薄膜元件定义的图像传输过程
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申请号: US10751807申请日: 2004-01-05
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公开(公告)号: US07297470B2公开(公告)日: 2007-11-20
- 发明人: Dwight Cornwell , Douglas Johnson Werner
- 申请人: Dwight Cornwell , Douglas Johnson Werner
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址: NL Amsterdam
- 代理机构: Zilka-Kotab, PC
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; G11B5/127
摘要:
A method for fabricating a thin film component includes forming a wafer having a thin film layer, a release layer, and a patterned layer of photoresist. The pattern of the layer of photoresist is transferred to the release layer and the thin film layer. A layer of metal is added to the wafer. The wafer is heated to a temperature above a glass transition temperature of the photoresist for a period of time sufficient to cause deformation of the photoresist to an extent that the photoresist creates cracks in the metal layer. A solvent is applied to the wafer to dissolve the release layer, the solvent penetrating the cracks in the metal layer to reach the release layer. The release layer and any material above the release layer are removed.
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