发明授权
- 专利标题： Method of fabricating memory and memory
- 专利标题（中）： 制造记忆和记忆的方法
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申请号： US11260243申请日： 2005-10-28
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公开(公告)号： US07297559B2公开(公告)日： 2007-11-20
- 发明人: Kazunari Honma , Shigeharu Matsushita
- 申请人： Kazunari Honma , Shigeharu Matsushita
- 申请人地址： JP Osaka
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Arent Fox LLP
- 优先权： JP2003-81671 20030325
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of fabricating a memory capable of improving the strength of a signal read from a memory cell is provided. This method of fabricating a memory comprises steps of forming a storage part and an etched thin-film part by partially etching a storage material film formed on a first electrode film by a prescribed thickness, forming an insulator film to cover at least the thin-film part of the storage material film and patterning the insulator film and the thin-film part of the storage material film by forming an etching mask on a prescribed region of the insulator film and thereafter etching the insulator film and the thin-film part of the storage material film through the etching mask.
公开/授权文献
- US20060063279A1 Method of fabricating memory and memory 公开/授权日：2006-03-23
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