发明授权
- 专利标题: Conductive metal oxide gate ferroelectric memory transistor
- 专利标题(中): 导电金属氧化物栅极铁电存储晶体管
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申请号: US10659547申请日: 2003-09-09
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公开(公告)号: US07297602B2公开(公告)日: 2007-11-20
- 发明人: Sheng Teng Hsu , Tingkai Li
- 申请人: Sheng Teng Hsu , Tingkai Li
- 申请人地址: US WA Camas
- 专利权人: Sharp Laboratories of America, Inc.
- 当前专利权人: Sharp Laboratories of America, Inc.
- 当前专利权人地址: US WA Camas
- 代理机构: Law Office of Gerald Maliszewski
- 代理商 Gerald Maliszewski
- 主分类号: H01L21/331
- IPC分类号: H01L21/331 ; H01L21/335
摘要:
The present invention discloses a ferroelectric transistor having a conductive oxide in the place of the gate dielectric. The conductive oxide gate ferroelectric transistor can have a three-layer metal/ferroelectric/metal or a two-layer metal/ferroelectric on top of the conductive oxide gate. By replacing the gate dielectric with a conductive oxide, the bottom gate of the ferroelectric layer is conductive through the conductive oxide to the silicon substrate, thus minimizing the floating gate effect. The memory retention degradation related to the leakage current associated with the charges trapped within the floating gate is eliminated. The fabrication of the ferroelectric transistor by a gate etching process or a replacement gate process is also disclosed.