发明授权
- 专利标题: Magnetoresistive sensor based on spin accumulation effect with free layer stabilized by in-stack orthogonal magnetic coupling
- 专利标题(中): 基于自旋积累效应的磁阻传感器,通过叠层正交磁耦合稳定自由层
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申请号: US11093342申请日: 2005-03-29
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公开(公告)号: US07298597B2公开(公告)日: 2007-11-20
- 发明人: Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
- 申请人: Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址: NL Amsterdam
- 代理商 Thomas R. Berthold
- 主分类号: G11B5/39
- IPC分类号: G11B5/39 ; G11B5/127
摘要:
A magnetoresistive sensor based on the spin accumulation effect has an in-stack biasing structure with a ferromagnetic biasing layer that is magnetically-coupled orthogonally with the sensor free ferromagnetic layer across a spacer layer. The sensor has an electrically conductive strip with a first tunnel barrier and a free ferromagnetic layer on the front or sensing end of the strip and second tunnel barrier and a fixed ferromagnetic layer on the back end of the strip. A magnetically-coupling spacer layer is formed on the free layer and the ferromagnetic biasing layer is formed on the spacer layer. The magnetically-coupling layer induces direct orthogonal magnetic coupling between the in-plane magnetization directions of the biasing layer and the free layer.
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