发明授权
US07300713B2 Magnetic thin film media with an underlayer of CrMoZr, CrMoNb or CrMoMn
有权
具有CrMoZr,CrMoNb或CrMoMn底层的磁性薄膜介质
- 专利标题: Magnetic thin film media with an underlayer of CrMoZr, CrMoNb or CrMoMn
- 专利标题(中): 具有CrMoZr,CrMoNb或CrMoMn底层的磁性薄膜介质
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申请号: US10976557申请日: 2004-10-29
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公开(公告)号: US07300713B2公开(公告)日: 2007-11-27
- 发明人: Xiaoping Bian , Jack Chang , Ernesto E. Marinero , Mohammad Mirzamaani
- 申请人: Xiaoping Bian , Jack Chang , Ernesto E. Marinero , Mohammad Mirzamaani
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址: NL Amsterdam
- 代理商 G. Marlin Knight
- 主分类号: G11B5/66
- IPC分类号: G11B5/66 ; G11B5/70
摘要:
A thin film disk for use in magnetic recording with an underlayer structure that includes a layer of CrMoZr, CrMoNb or CrMoMn is described. The preferred embodiment includes a circumferentially textured glass substrate, a pre-seed layer, a B2 seed layer, an underlayer structure and a magnetic layer stack with a plurality of layers. The preferred underlayer structure has a first underlayer of CrTi followed by a second underlayer of CrMoZr. The preferred B2 seed layer material is RuAl. The preferred pre-seed layer is CrTiAl. The preferred magnetic layer stack is CoCr/CoPtCrB/CoPtCrBCu. The preferred embodiment is useful for longitudinal magnetic recording. The in-plane crystallographic orientation, the Mrt orientation ratio and the media SNR are improved by the inclusion of the CrMoZr, CrMoNb or CrMoMn according to the invention.
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