Invention Grant
- Patent Title: Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor
- Patent Title (中): 应变完全耗尽的绝缘体上硅绝缘体器件及其制造方法
-
Application No.: US10986399Application Date: 2004-11-10
-
Publication No.: US07306997B2Publication Date: 2007-12-11
- Inventor: Qi Xiang , Niraj Subba , Witold P. Maszara , Zoran Krivokapic , Ming-Ren Lin
- Applicant: Qi Xiang , Niraj Subba , Witold P. Maszara , Zoran Krivokapic , Ming-Ren Lin
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agent Mikio Ishimaru
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A semiconductor substrate is provided having an insulator thereon with a semiconductor layer on the insulator. A deep trench isolation is formed, introducing strain to the semiconductor layer. A gate dielectric and a gate are formed on the semiconductor layer. A spacer is formed around the gate, and the semiconductor layer and the insulator are removed outside the spacer. Recessed source/drain are formed outside the spacer.
Public/Granted literature
- US20060099752A1 Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor Public/Granted day:2006-05-11
Information query
IPC分类:
