发明授权
US07307335B2 Semiconductor device having MOS varactor and methods for fabricating the same
有权
具有MOS变容二极管的半导体器件及其制造方法
- 专利标题: Semiconductor device having MOS varactor and methods for fabricating the same
- 专利标题(中): 具有MOS变容二极管的半导体器件及其制造方法
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申请号: US11048715申请日: 2005-02-03
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公开(公告)号: US07307335B2公开(公告)日: 2007-12-11
- 发明人: Dae-Hyun Kim , Han-Su Oh
- 申请人: Dae-Hyun Kim , Han-Su Oh
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR10-2004-0009380 20040212
- 主分类号: H01L29/00
- IPC分类号: H01L29/00 ; H01L27/01 ; H01L27/12 ; H01L31/0392
摘要:
A semiconductor device with having a MOS varactor and methods of fabricating the same are disclosed. The MOS varactor includes a metal gate electrode, an active semiconductor plate interposed between the metal gate electrode and the semiconductor substrate, and a capacitor dielectric layer interposed between the metal gate electrode and the active semiconductor plate. Further, a lower insulating layer insulates the MOS varactor from the semiconductor substrate. According to the present invention, a metal gate electrode is used to reduce poly depletion, thereby increasing a tuning range of the varactor, and to manufacture a reliable metal resistor without the need of an additional photomask.