Invention Grant
- Patent Title: Electron emitter and method of producing the same
- Patent Title (中): 电子发射体及其制造方法
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Application No.: US10952524Application Date: 2004-09-28
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Publication No.: US07307383B2Publication Date: 2007-12-11
- Inventor: Yukihisa Takeuchi , Tsutomu Nanataki , Iwao Ohwada
- Applicant: Yukihisa Takeuchi , Tsutomu Nanataki , Iwao Ohwada
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown
- Priority: JP2003-346091 20031003
- Main IPC: G01G3/10
- IPC: G01G3/10 ; H01J29/70

Abstract:
An electron emitter includes an emitter section having a plate shape, a cathode electrode formed on a front surface of the emitter section, and an anode electrode formed on a back surface of the emitter section. A gap is formed between an outer peripheral portion of the cathode electrode and the front surface of the emitter section. The front surface of the emitter section contacts a lower surface of the outer peripheral portion to form a base end as a triple junction. The gap expands from the base end toward a tip end of the outer peripheral portion.
Public/Granted literature
- US20050073261A1 Electron emitter and method of producing the same Public/Granted day:2005-04-07
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