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发明授权
US07309559B2 Resist pattern, process for producing same, and utilization thereof 有权
抗蚀剂图案，其制造方法及其利用

Resist pattern, process for producing same, and utilization thereof
摘要：
A resist pattern having a film thickness of 1 to 100 μm and an aspect ratio (ratio of the line width to the film thickness of the resist pattern) of 3.5 or higher is provided in accordance with the present invention, the resist pattern being useful for increasing the density of a semiconductor package substrate circuit, and use of the resist pattern enabling a low conductor resistance to be maintained in fine wiring.This resist pattern can be produced using, for example, a photosensitive resin composition that includes (A) a binder polymer, (B1) a photopolymerizable compound having three ethylenically unsaturated bonds per molecule, (C) a photopolymerization initiator, and (D) either or both of a compound represented by general formula (I): (in the formula, m is an integer of 2 to 6) or a compound represented by general formula (II).
摘要（中）：

根据本发明，提供了膜厚度为1〜100μm的抗蚀剂图案和宽高比（线宽与抗蚀剂图案的膜厚度的比率）为3.5以上的抗蚀剂图案，抗蚀剂图案可用于 提高半导体封装基板电路的密度，并且使用能够在精细布线中保持低导体电阻的抗蚀剂图案。 该抗蚀剂图案可以使用例如包含（A）粘合剂聚合物，（B1）每分子具有三个烯键式不饱和键的光聚合性化合物，（C）光聚合引发剂的光敏树脂组合物和（D） 或由通式（I）表示的化合物（式中，m为2〜6的整数）或通式（II）表示的化合物两者。

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