A method is provided for fabricating an integrated circuit. According to the method, hollow isolating trenches are produced within a substrate, and active components are produced in and on active areas of the substrate that are between the trenches. The trenches are produced in an initial phase carried out before production of the active components and a final phase carried out after production of the active components. In the initial phase, trenches are formed in the substrate, and the trenches are filled with a fill material. In the final phase, the active components are encapsulated, accesses are created through the encapsulation material to each filled trench, the fill material is removed through each access, and the opening of each trench is plugged through the corresponding access. Also provided is an integrated that includes hollow isolating trenches within a substrate.