利索-全球专利检索

  1. 登录
  2. 注册
发明授权
US07311008B2 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure 有权
包括应力敏感元件的半导体结构和测量半导体结构中的应力的方法

Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure
摘要：
A semiconductor structure comprises a stress sensitive element. A property of the stress sensitive element is representative of a stress in the semiconductor structure. Additionally, the semiconductor structure may comprise an electrical element. The stress sensitive element and the electrical element comprise portions of a common layer structure. Analyzers may be adapted to determine a property of the stress sensitive element being representative of a stress in the semiconductor structure and a property of the electrical element. The property of the stress sensitive element may be determined and the manufacturing process may be modified based on the determined property of the stress sensitive element. The property of the electrical element may be related to the property of the stress sensitive element in order to investigate an influence of stress on the electrical element.
摘要（中）：

半导体结构包括应力敏感元件。 应力敏感元件的特性代表半导体结构中的应力。 另外，半导体结构可以包括电气元件。 应力敏感元件和电气元件包括公共层结构的部分。 分析器可以适于确定应力敏感元件的性质代表半导体结构中的应力和电元件的性质。 可以确定应力敏感元件的性质，并且可以基于确定的应力敏感元件的性质来修改制造过程。 电元件的性质可能与应力敏感元件的性质有关，以便研究应力对电气元件的影响。

公开/授权文献
信息查询
Espacenet
0/0