发明授权
US07312145B2 Electronic member, method for making the same, and semiconductor device 失效
电子元件及其制造方法以及半导体器件

  • 专利标题: Electronic member, method for making the same, and semiconductor device
  • 专利标题(中): 电子元件及其制造方法以及半导体器件
  • 申请号: US10502129
    申请日: 2003-10-22
  • 公开(公告)号: US07312145B2
    公开(公告)日: 2007-12-25
  • 发明人: Takeshi Hashimoto
  • 申请人: Takeshi Hashimoto
  • 申请人地址: JP Chuo-Ku, Tokyo
  • 专利权人: Tomoegawa Paper Co., Ltd.
  • 当前专利权人: Tomoegawa Paper Co., Ltd.
  • 当前专利权人地址: JP Chuo-Ku, Tokyo
  • 代理机构: Wood, Herron & Evans
  • 优先权: JP2002-308684 20021023
  • 国际申请: PCT/JP03/13493 WO 20031022
  • 国际公布: WO2004/038799 WO 20040506
  • 主分类号: H01L21/4763
  • IPC分类号: H01L21/4763
Electronic member, method for making the same, and semiconductor device
摘要:
The present invention provides an electronic device having high insulating reliability, in which metal portions of a circuit are not electrically conductive with each other via an adhesive layer even when the electronic device is used in high-temperature low-humidity conditions or high-temperature high-humidity conditions, and provides a production method for the electronic device, and a semiconductor device comprising the electronic device. In the electronic device in which a circuit formed by pattern formation of metal portions is attached via an adhesive layer to an insulating base, the adhesive layer, which contacts adjacent metal portions, is divided. Typically, the electronic device is one of a lead frame having a lead frame fixing tape, a TAB tape, and a flexible printed circuit board.
信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件,例如PN结、耗尽层、载体集结层
H01L21/34 ...具有H01L21/06,H01L21/16及H01L21/18各组不包含的或有或无杂质,例如掺杂材料的半导体的器件
H01L21/46 ....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的(在半导体材料上制作电极的入H01L21/44)
H01L21/461 .....改变半导体材料的表面物理特性或形状的,例如腐蚀、抛光、切割
H01L21/4763 ......非绝缘层的沉积,例如绝缘层上的导电层、电阻层;这些层的后处理(电极的制造入H01L21/28)
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