发明授权
- 专利标题： Spin-current switchable magnetic memory element and method of fabricating the memory element
- 专利标题（中）： 旋转电流可切换磁存储元件及其制造方法
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申请号： US10990401申请日： 2004-11-18
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公开(公告)号： US07313013B2公开(公告)日： 2007-12-25
- 发明人: Jonathan Zanhong Sun , Stuart Stephen Papworth Parkin
- 申请人： Jonathan Zanhong Sun , Stuart Stephen Papworth Parkin
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： McGinn I.P. Law Group PLLC
- 代理商 Stephen C. Kaufman, Esq.
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A spin-current switchable magnetic memory element (and method of fabricating the memory element) includes a plurality of magnetic layers having a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a rare-earth metal and a transition metal, and at least one barrier layer formed adjacent to at least one of the plurality of magnetic layers.
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