Invention Grant
- Patent Title: Split gate non-volatile memory devices and methods of forming same
- Patent Title (中): 分闸非易失性存储器件及其形成方法
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Application No.: US11368154Application Date: 2006-03-03
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Publication No.: US07315057B2Publication Date: 2008-01-01
- Inventor: Hee Seog Jeon , Sung-Taeg Kang , Hyok-Ki Kwon , Yong Tae Kim , BoYoung Seo , Seung Beom Yoon , Jeong-Uk Han
- Applicant: Hee Seog Jeon , Sung-Taeg Kang , Hyok-Ki Kwon , Yong Tae Kim , BoYoung Seo , Seung Beom Yoon , Jeong-Uk Han
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: F. Chau & Assoc, LLC
- Priority: KR10-2005-0021074 20050314
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L21/336
Abstract:
Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased floating gate coupling ratios, thereby enabling enhanced programming and erasing efficiency and performance.
Public/Granted literature
- US20060202255A1 Split gate non-volatile memory devices and methods of forming same Public/Granted day:2006-09-14
Information query
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