A native high-voltage n-channel LDMOSFET includes a p− doped substrate, a first n+ doped region disposed in the p− doped substrate, a source terminal coupled to the first n+ doped region, an n− well disposed in the substrate, a second n+ doped region disposed in the n− well, a drain terminal coupled to the second n+ doped region, a p+ doped region disposed in the substrate, a body terminal coupled to the p+ doped region, a dielectric layer disposed over the p− doped substrate and a portion of the n− well, a first trench disposed in the n− well, the trench filled with a dielectric material that is in contact with the dielectric layer, a second trench disposed at least partially in the n− well, the second trench filled with a dielectric material and isolating the second n+ region from the p+ region, and a gate partially or fully reversely doped with p+ implant (or an equivalent technique) and disposed over the dielectric layer and a portion of the first trench.