发明授权
US07315474B2 Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
有权
非易失性存储器单元，包括相同的存储器阵列以及操作单元和阵列的方法
- 专利标题： Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
- 专利标题（中）： 非易失性存储器单元，包括相同的存储器阵列以及操作单元和阵列的方法
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申请号： US11324581申请日： 2006-01-03
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公开(公告)号： US07315474B2公开(公告)日： 2008-01-01
- 发明人: Hang-Ting Lue
- 申请人： Hang-Ting Lue
- 申请人地址： TW Hsinchu
- 专利权人： Macronix International Co., Ltd
- 当前专利权人： Macronix International Co., Ltd
- 当前专利权人地址： TW Hsinchu
- 代理机构： Haynes Beffel & Wolfeld LLP
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a small hole-tunneling-barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays thereof and methods of operation.
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