Invention Grant
- Patent Title: Method of producing a microelectronic electrode structure, and microelectronic electrode structure
- Patent Title (中): 微电子电极结构的制造方法和微电子电极结构
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Application No.: US11296740Application Date: 2005-12-07
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Publication No.: US07317201B2Publication Date: 2008-01-08
- Inventor: Martin Gutsche , Harald Seidl
- Applicant: Martin Gutsche , Harald Seidl
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Jenkins, Wilson, Taylor & Hunt, P.A.
- Priority: DE102004059428 20041209
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
In a method for producing a microelectronic electrode structure a first wiring plane is prepared, an insulating region on the first wiring plane is provided, a through-hole in the insulating region is formed, a ring electrode in the through-hole is formed, and a second wiring plane is formed on the insulating region. The ring electrode comprises a first side and a second side, the ring electrode is electrically connected on the first side to the first wiring plane, and the second wiring plane is electrically connected to the second side of the ring electrode.
Public/Granted literature
- US20060125108A1 Method of producing a microelectronic electrode structure, and microelectronic electrode structure Public/Granted day:2006-06-15
Information query
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