发明授权
- 专利标题: Control method of a non-volatile memory apparatus
- 专利标题(中): 非易失性存储装置的控制方法
-
申请号: US10496622申请日: 2003-09-29
-
公开(公告)号: US07321959B2公开(公告)日: 2008-01-22
- 发明人: Toshiyuki Honda , Masayuki Toyama , Keisuke Sakai
- 申请人: Toshiyuki Honda , Masayuki Toyama , Keisuke Sakai
- 申请人地址: JP Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: Akin Gump Strauss Hauer & Feld LLP
- 优先权: JP2002-290297 20021002
- 国际申请: PCT/JP03/12448 WO 20030929
- 国际公布: WO2004/031966 WO 20040415
- 主分类号: G06F12/00
- IPC分类号: G06F12/00
摘要:
A control method of a non-volatile memory apparatus, which can execute data writing normally after the next startup even when a process is interrupted because of the occurrences of abnormal conditions such as power shut down during data writing or data erasing is provided. The control method of a non-volatile memory apparatus of the present invention comprises: a first flag writing step of writing a fixed value, which indicates that data is written, on a first flag existing in a redundancy area on a first page of a physical block and indicating whether or not data is written on the first page; and a data writing step of writing data on the physical block, when the data is written on the non-volatile memory consisting of a plurality of physical blocks.
公开/授权文献
- US20050013154A1 Non-volatile storage device control method 公开/授权日:2005-01-20
信息查询