发明授权
- 专利标题： Magnification correction employing out-of-plane distortion of a substrate
- 专利标题（中）： 使用基板的平面外失真的放大率校正
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申请号： US10735110申请日： 2003-12-12
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公开(公告)号： US07323130B2公开(公告)日： 2008-01-29
- 发明人: Pawan K. Nimmakayala , Sidlgata V. Sreenivasan , Byung-Jin Choi , Anshuman Cherala
- 申请人： Pawan K. Nimmakayala , Sidlgata V. Sreenivasan , Byung-Jin Choi , Anshuman Cherala
- 申请人地址： US TX Austin
- 专利权人： Molecular Imprints, Inc.
- 当前专利权人： Molecular Imprints, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Fish & Richardson P.C.
- 代理商 Kelly K. Kordzik
- 主分类号： B29C41/02
- IPC分类号： B29C41/02 ; B29C41/48 ; B29C41/50 ; B29C53/02
摘要：
The present invention is directed to a method of controlling dimensional relations between an original pattern present in a mold and a recorded pattern formed in a layer of a substrate. In this manner, the size of the recorded pattern may appear to be magnified and/or reduced, when compared to the original pattern. To that end, the method comprises defining a region on the layer in which to produce the recorded pattern. The substrate is bent to produce a contoured surface in the region. Dimensional variations in the original pattern are produced by bending the mold, defining a varied pattern. The contoured surface and the mold are provided to have similar radii of curvatures. The varied pattern is then recorded in the layer. These and other embodiments of the present invention are discussed more fully below.
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