发明授权
- 专利标题: Multilayer perpendicular media with high-boron or high-carbon additives to CoCr films
- 专利标题(中): 多层垂直介质与高硼或高碳添加剂CoCr膜
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申请号: US10402772申请日: 2003-03-28
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公开(公告)号: US07323259B2公开(公告)日: 2008-01-29
- 发明人: Qixu Chen , Charles Brucker , Rajiv Yadav Ranjan
- 申请人: Qixu Chen , Charles Brucker , Rajiv Yadav Ranjan
- 申请人地址: US CA Scotts Valley
- 专利权人: Seagate Technology LLC
- 当前专利权人: Seagate Technology LLC
- 当前专利权人地址: US CA Scotts Valley
- 代理机构: Darby & Darby, P.C.
- 主分类号: G11B5/66
- IPC分类号: G11B5/66 ; G11B5/70
摘要:
Carbon or boron is added into the CoCr layers of a multiplayer perpendicular magnetic media structure to reduce media noise. The perpendicular magnetic media structure has sharp interfaces between Co-alloy layers and Pd or Pt layers and significantly reduced exchange coupling. In accordance with one embodiment of the invention, the perpendicular magnetic media structure with carbon or boron additives is 700 Å FeCo30.8B12/20 Å TaOx/700 Å FeCo30.8B12/20 Å TaOx/700 Å FeCo30.8B12/20 Å TaOx/158 Å FeCo30.8B12/17 Å Ta/49 Å ITO/33 Å CoCr37Ru10/2.5 Å COy/2.5 Å C/[(CoCr9)C6.8/Pd]19/50 Å CHN. [(CoCr9)C6.8/Pd]19 means 19 layers of the bi-layer stack (CoCr9)C6.8/Pd. TaOx stands for surface-oxidized Ta and COy stands for C oxides. ITO stands for Indium Tin Oxide and consists of In2O3 and Sn2O5 at 80 and 20 molecular percent respectively. CHN refers to hydrogenated and nitrogenated carbon.
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