Invention Grant
- Patent Title: Thin film transistor array substrate and method of producing the same
- Patent Title (中): 薄膜晶体管阵列基板及其制造方法
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Application No.: US11189980Application Date: 2005-07-27
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Publication No.: US07323713B2Publication Date: 2008-01-29
- Inventor: Nobuaki Ishiga , Takuji Yoshida , Yuichi Masutani , Shingo Nagano
- Applicant: Nobuaki Ishiga , Takuji Yoshida , Yuichi Masutani , Shingo Nagano
- Applicant Address: JP Chiyoda-Ku, Tokyo
- Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JP Chiyoda-Ku, Tokyo
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: JPP.2004-218499 20040727
- Main IPC: H01L29/04
- IPC: H01L29/04

Abstract:
A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.
Public/Granted literature
- US20060022199A1 Thin film transistor array substrate and method of producing the same Public/Granted day:2006-02-02
Information query
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