发明授权
- 专利标题: Driver circuit
- 专利标题(中): 驱动电路
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申请号: US11211638申请日: 2005-08-26
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公开(公告)号: US07323923B2公开(公告)日: 2008-01-29
- 发明人: Eisaku Maeda , Hiroshi Ando , Jinsaku Kaneda , Akihiro Maejima , Hiroki Matsunaga
- 申请人: Eisaku Maeda , Hiroshi Ando , Jinsaku Kaneda , Akihiro Maejima , Hiroki Matsunaga
- 申请人地址: JP Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: Greenblum & Bernstein, P.L.C.
- 优先权: JP2004-249733 20040830; JP2005-237952 20050818
- 主分类号: H03L5/00
- IPC分类号: H03L5/00
摘要:
A driver circuit is provided for preventing generation of a pass-through current in a CMOS output unit even if a power supply voltage VDD supplied from a low voltage power supply drops below a recommended operating power supply voltage. The driver circuit includes a level shift unit having PMOS transistors and NMOS transistors, and a CMOS output unit having a PMOS transistor and an NMOS transistor. The source, drain and gate of one PMOS transistor are respectively connected to a high voltage power supply, a first contact and a second contact. The source, drain and gate of a second PMOS transistor are respectively connected to a high voltage power supply, the second contact and the first contact. The source of one NMOS transistor is grounded, the drain thereof is connected to the first contact, and the gate thereof receives a low voltage signal. The source of a second NMOS transistor is grounded, the drain thereof is connected to the second contact, and the gate thereof receives a low voltage signal. In this driver circuit, the driving current of the one PMOS transistor is higher than the driving current of the one NMOS transistor.
公开/授权文献
- US20060044041A1 Driver circuit 公开/授权日:2006-03-02
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