Invention Grant
- Patent Title: Quality evaluation method for single crystal ingot
- Patent Title (中): 单晶锭质量评估方法
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Application No.: US11424060Application Date: 2006-06-14
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Publication No.: US07326292B2Publication Date: 2008-02-05
- Inventor: Jin Geun Kim , Hyon Jong Cho
- Applicant: Jin Geun Kim , Hyon Jong Cho
- Applicant Address: KR
- Assignee: Siltron Inc.
- Current Assignee: Siltron Inc.
- Current Assignee Address: KR
- Agency: Grossman, Tucker, Perreault & Pfleger, PLLC
- Priority: KR10-2005-0051082 20050614
- Main IPC: C30B35/00
- IPC: C30B35/00

Abstract:
The inventive quality evaluation method for a single crystal ingot generally includes a step of determining cropping and sampling positions and a step of evaluating a sample. The step of determining cropping and sampling positions includes: (a) inputting basic information on the decision of cropping, sampling and prime positions according to equipments and products, (b) predetermining the cropping, sampling and prime positions according to the basic information, (c) monitoring a growing process of a growing ingot and analyzing/storing X factors related with the growing process of the growing ingot, and (d) determining the cropping and sampling positions based on the X factors related with the growing process.
Public/Granted literature
- US20060282229A1 Quality Evaluation Method for Single Crystal Ingot Public/Granted day:2006-12-14
Information query
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