Invention Grant
US07326937B2 Plasma ion implantation systems and methods using solid source of dopant material
失效
等离子体离子注入系统和使用固体源的掺杂剂材料的方法
- Patent Title: Plasma ion implantation systems and methods using solid source of dopant material
- Patent Title (中): 等离子体离子注入系统和使用固体源的掺杂剂材料的方法
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Application No.: US11076696Application Date: 2005-03-09
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Publication No.: US07326937B2Publication Date: 2008-02-05
- Inventor: Sandeep Mehta , Steven R. Walther , Naushad K. Variam
- Applicant: Sandeep Mehta , Steven R. Walther , Naushad K. Variam
- Applicant Address: US MA Gloucester
- Assignee: Verian Semiconductor Equipment Associates, Inc.
- Current Assignee: Verian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01J27/00
- IPC: H01J27/00
Abstract:
Plasma ion implantation apparatus includes a process chamber, a platen located in the process chamber for supporting a substrate, a dopant source including a solid dopant element and a vaporizer to vaporize dopant material from the solid dopant element, a plasma source to produce a plasma containing ions of the dopant material, and an implant pulse source to apply implant pulses to the platen for accelerating the ions of the dopant material from the plasma into the substrate.
Public/Granted literature
- US20060219952A1 Plasma ion implantation systems and methods using solid source of dopant material Public/Granted day:2006-10-05
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