发明授权
- 专利标题： Organic thin film transistor and method of manufacturing the same
- 专利标题（中）： 有机薄膜晶体管及其制造方法
-
申请号： US10882091申请日： 2004-06-30
-
公开(公告)号： US07329897B2公开(公告)日： 2008-02-12
- 发明人: Takao Nishikawa , Tatsuya Shimoda , Yoshihiro Iwasa , Taishi Takenobu , Shinichiro Kobayashi , Tadaoki Mitani
- 申请人： Takao Nishikawa , Tatsuya Shimoda , Yoshihiro Iwasa , Taishi Takenobu , Shinichiro Kobayashi , Tadaoki Mitani
- 申请人地址： JP
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： JP2003-193110 20030707
- 主分类号： H01L35/24
- IPC分类号： H01L35/24 ; H01L29/04
摘要：
An organic thin film transistor and a method of manufacturing the same are provided. The transistor has a threshold voltage that can be easily controlled without changing the material forming an organic semiconductor film. The organic thin film transistor includes a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor film. A threshold voltage controlling film is provided between the gate insulating film and the organic semiconductor film.