发明授权
US07330260B2 Method for measuring ion-implanted semiconductors with improved repeatability
失效
用于测量具有改善的重复性的离子注入半导体的方法
- 专利标题: Method for measuring ion-implanted semiconductors with improved repeatability
- 专利标题(中): 用于测量具有改善的重复性的离子注入半导体的方法
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申请号: US11067961申请日: 2005-02-28
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公开(公告)号: US07330260B2公开(公告)日: 2008-02-12
- 发明人: Lena Nicolaides , Mira Bakshi , Alex Salnik , Jon Opsal
- 申请人: Lena Nicolaides , Mira Bakshi , Alex Salnik , Jon Opsal
- 申请人地址: US CA San Jose
- 专利权人: KLA-Tencor Corporation
- 当前专利权人: KLA-Tencor Corporation
- 当前专利权人地址: US CA San Jose
- 代理机构: Stallman & Pollock LLP
- 主分类号: G01J4/00
- IPC分类号: G01J4/00
摘要:
The repeatability of wafer uniformity measurements can be increased by taking spatially averaged measurements of wafer response. By increasing the time over which measurements are obtained, the amount of noise can be significantly reduced, thereby improving the repeatability of the measurements. These measurements can be taken at several locations on the wafer to ensure wafer uniformity. In order to get a stable and repeatable assessment of the wafer process, addressing uncertainties related to damage relaxation or incomplete anneal, an anneal decay factor (ADF) characterization can be performed at a distance away from the TW measurement boxes. From the ADF measurement and the spatially averaged measurements of wafer response, a repeatable assessment of the wafer process can be obtained.
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