发明授权
- 专利标题: Piezoelectric/electrostrictive film type device and method of manufacturing the same
- 专利标题(中): 压电/电致伸缩薄膜型器件及其制造方法
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申请号: US11233391申请日: 2005-09-22
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公开(公告)号: US07332851B2公开(公告)日: 2008-02-19
- 发明人: Tsutomu Nanataki , Hirofumi Yamaguchi , Toshikatsu Kashiwaya , Takaaki Koizumi
- 申请人: Tsutomu Nanataki , Hirofumi Yamaguchi , Toshikatsu Kashiwaya , Takaaki Koizumi
- 申请人地址: JP Nagoya
- 专利权人: NGK Insulators, Ltd.
- 当前专利权人: NGK Insulators, Ltd.
- 当前专利权人地址: JP Nagoya
- 代理机构: Burr & Brown
- 主分类号: H01L41/187
- IPC分类号: H01L41/187
摘要:
A piezoelectric/electrostrictive film device is provided including a thin ceramic substrate and a piezoelectric/electrostrictive operating portion disposed on the substrate. The piezoelectric/electrostrictive operating portion includes a lower electrode film, a piezoelectric/electrostrictive film including a large number of crystal particles having a piezoelectric/electrostrictive composition, and an upper electrode film successively laminated on the substrate. The piezoelectric/electrostrictive composition excludes lead and contains one or more alkali metal elements selected from the group consisting of lithium, potassium, and sodium, and one or more metal elements selected from the group consisting of niobium, tantalum, antimony, and silver. Circle equivalent diameters of at least 90% of the crystal particles in the piezoelectric/electrostrictive film are in a range of 0.3 to 50 μm.
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