发明授权
US07332953B2 Circuit and method for controlling the threshold voltage of transistors 有权
用于控制晶体管阈值电压的电路和方法

  • 专利标题: Circuit and method for controlling the threshold voltage of transistors
  • 专利标题(中): 用于控制晶体管阈值电压的电路和方法
  • 申请号: US10523666
    申请日: 2003-08-04
  • 公开(公告)号: US07332953B2
    公开(公告)日: 2008-02-19
  • 发明人: Jose De Jesus Pineda De GyvezMassimo Leone
  • 申请人: Jose De Jesus Pineda De GyvezMassimo Leone
  • 申请人地址: NL Eindhoven
  • 专利权人: NXP B.V.
  • 当前专利权人: NXP B.V.
  • 当前专利权人地址: NL Eindhoven
  • 代理商 Peter Zawilski
  • 优先权: EP02078286 20020808; EP02078778 20020913
  • 国际申请: PCT/IB03/03473 WO 20030804
  • 国际公布: WO2004/015867 WO 20040219
  • 主分类号: H03K3/01
  • IPC分类号: H03K3/01
Circuit and method for controlling the threshold voltage of transistors
摘要:
A control unit, for controlling a threshold voltage of a circuit unit having transistor devices, includes a reference circuit and a measuring unit. The measuring unit is configured to measure a threshold voltage of at least one sensing transistor of the circuit unit, and to measure a threshold voltage of at least one reference transistor of the reference circuit. A differential voltage generator is configured to generate a differential voltage from outputs of the measuring unit and a bulk connection of the transistor devices in the circuit unit to which the differential voltage is fed as a biasing voltage.
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