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发明授权
US07335455B2 Method of forming an underlayer of a bi-layer resist film and method of fabricating a semiconductor device using the same 有权
形成双层抗蚀剂膜的底层的方法和使用其制造半导体器件的方法

Method of forming an underlayer of a bi-layer resist film and method of fabricating a semiconductor device using the same
摘要：
A method of forming an underlayer of a bi-layer resist including forming a blended material by blending a polymer having an aromatic group and a methacrylate polymer, and coating a substrate with the blended material. The blended material coated on the substrate is irradiated to form an underlayer. The polymer having the aromatic group may be a novolac polymer or a naphthalene polymer.
摘要（中）：

一种形成双层抗蚀剂的底层的方法，包括通过混合具有芳族基团的聚合物和甲基丙烯酸酯聚合物形成共混材料，并用共混材料涂覆基材。 涂布在基材上的混合材料被照射以形成底层。 具有芳基的聚合物可以是酚醛清漆聚合物或萘聚合物。

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