发明授权
US07335961B2 Magnetic random access memory array with coupled soft adjacent magnetic layer
失效
具有耦合的软相邻磁性层的磁性随机存取存储器阵列
- 专利标题： Magnetic random access memory array with coupled soft adjacent magnetic layer
- 专利标题（中）： 具有耦合的软相邻磁性层的磁性随机存取存储器阵列
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申请号： US11210637申请日： 2005-08-25
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公开(公告)号： US07335961B2公开(公告)日： 2008-02-26
- 发明人: Yimin Guo , Tai Min , Pokang Wang , Xi Zeng Shi
- 申请人： Yimin Guo , Tai Min , Pokang Wang , Xi Zeng Shi
- 申请人地址： US CA Milpitas US CA Milpitas
- 专利权人： Headway Technologies, Inc.,Applied Spintronics, Inc.
- 当前专利权人： Headway Technologies, Inc.,Applied Spintronics, Inc.
- 当前专利权人地址： US CA Milpitas US CA Milpitas
- 代理机构： Saile Ackerman LLC
- 代理商 Stephen B. Ackerman
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
An MTJ element is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity layer and a soft magnetic layer under the high conductivity layer. During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer in the MTJ. This coupling provides thermal stability to the free layer magnetization and ease of switching and the coupling may be further enhanced by inducing a shape or crystalline anisotropy into the free layer during formation.
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