发明授权
- 专利标题: MCrAl layer
- 专利标题(中): MCrAl层
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申请号: US10516095申请日: 2003-05-21
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公开(公告)号: US07338719B2公开(公告)日: 2008-03-04
- 发明人: Willem J. Quadakkers , Werner Stamm
- 申请人: Willem J. Quadakkers , Werner Stamm
- 申请人地址: DE Munich DE Julich
- 专利权人: Siemens Aktiengesellschaft,Forschungszentrum Julich GmbH
- 当前专利权人: Siemens Aktiengesellschaft,Forschungszentrum Julich GmbH
- 当前专利权人地址: DE Munich DE Julich
- 优先权: EP02011461 20020524
- 国际申请: PCT/EP03/05337 WO 20030521
- 国际公布: WO03/100133 WO 20031204
- 主分类号: B32B3/00
- IPC分类号: B32B3/00 ; B32B15/04
摘要:
MCrAl layers according to prior art often display chipping of the thermally grown aluminum oxide layer (TGO) as a result of thermally induced stresses, which significantly reduces the oxidation behavior or the bonding behavior of ceramic heat insulating layers. An inventive MCrAl layer is designed in such a way that the TGO created thereon is microporous and thus allows expansion. The microporosity of the TGO is ensured by adding elements into the MCrAl layer in a targeted manner.
公开/授权文献
- US20050164026A1 Mcral layer 公开/授权日:2005-07-28