发明授权
- 专利标题: p channel filed effect transistor and sensor using the same
- 专利标题(中): p沟道场效应晶体管和使用其的传感器
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申请号: US10549764申请日: 2004-03-25
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公开(公告)号: US07339212B2公开(公告)日: 2008-03-04
- 发明人: Hiroshi Kawarada
- 申请人: Hiroshi Kawarada
- 申请人地址: JP Kawaguchi-shi
- 专利权人: Japan Science and Technology Agency
- 当前专利权人: Japan Science and Technology Agency
- 当前专利权人地址: JP Kawaguchi-shi
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2003-082986 20030325
- 国际申请: PCT/JP2004/004196 WO 20040325
- 国际公布: WO2004/086025 WO 20041007
- 主分类号: H01L23/58
- IPC分类号: H01L23/58 ; H01L24/00
摘要:
A p channel field effect transistor in which the sensitivity of an enzyme can be enhanced by immobilizing the enzyme directly on an FET channel surface (diamond surface), as well as a sensor including the same, is provided. A diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals is treated under the action of glutaraldehyde OHC(CH2)3CHO (30), so that the glutaraldehyde (30) is immobilized on the diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals. Subsequently, urease (29) is further applied thereto, so that the amino group (31) of the urease (29) is bonded to the glutaraldehyde (30). That is, the urease (29) can be immobilized on the diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals. When the urea concentration is increased from 10−6 M to 10−2 M, the threshold voltage shifts by about 0.1 V in the positive direction, and the sensitivity to urea concentration of 30 mV/decade is exhibited.
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