发明授权
US07339828B2 Nonvolatile semiconductor memory device with memory cells, each having an FG cell transistor and select gate transistor, and a method of writing data into the same
失效
具有存储单元的非易失性半导体存储器件，每个具有FG单元晶体管和选择栅极晶体管，以及将数据写入其中的方法
- 专利标题： Nonvolatile semiconductor memory device with memory cells, each having an FG cell transistor and select gate transistor, and a method of writing data into the same
- 专利标题（中）： 具有存储单元的非易失性半导体存储器件，每个具有FG单元晶体管和选择栅极晶体管，以及将数据写入其中的方法
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申请号： US11248303申请日： 2005-10-13
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公开(公告)号： US07339828B2公开(公告)日： 2008-03-04
- 发明人: Takehiro Hasegawa , Susumu Shuto
- 申请人： Takehiro Hasegawa , Susumu Shuto
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2004-300386 20041014
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
A semiconductor device comprises a memory cell array and a source line driver. Each of the memory cells in the memory cell array has a floating gate cell transistor which stores data by accumulating charge in the floating gate and a select gate transistor whose drain is connected to the source of the cell transistor and whose source is connected to a source line. The source line driver is configured so as to drive the source line in a write operation at a potential between the substrate bias potential of the cell transistor and select gate transistor and the ground potential.
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