Invention Grant
US07342213B2 CMOS APS shared amplifier pixel with symmetrical field effect transistor placement
有权
具有对称场效应晶体管放置的CMOS APS共享放大器像素
- Patent Title: CMOS APS shared amplifier pixel with symmetrical field effect transistor placement
- Patent Title (中): 具有对称场效应晶体管放置的CMOS APS共享放大器像素
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Application No.: US11432573Application Date: 2006-05-11
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Publication No.: US07342213B2Publication Date: 2008-03-11
- Inventor: R. Michael Guidash , Timothy J. Kenney
- Applicant: R. Michael Guidash , Timothy J. Kenney
- Applicant Address: US NY Rochester
- Assignee: Eastman Kodak Company
- Current Assignee: Eastman Kodak Company
- Current Assignee Address: US NY Rochester
- Agent Peyton C. Watkins
- Main IPC: H01L27/00
- IPC: H01L27/00
Abstract:
An image sensor includes a plurality of photodetectors arranged in an array; and a plurality of transistors that are functionally shared by the photodetectors, wherein a distance of each photodetector to an adjacent transistor is substantially the same.
Public/Granted literature
- US20060273241A1 CMOS APS shared amplifier pixel with symmetrical field effect transistor placement Public/Granted day:2006-12-07
Information query
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