发明授权
- 专利标题: Method of fabricating laser diode
- 专利标题(中): 制造激光二极管的方法
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申请号: US11152255申请日: 2005-06-15
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公开(公告)号: US07344904B2公开(公告)日: 2008-03-18
- 发明人: Yeon-hee Kim , Kwang-ki Choi , Youn-joon Sung
- 申请人: Yeon-hee Kim , Kwang-ki Choi , Youn-joon Sung
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Buchanan Ingersoll & Rooney PC
- 优先权: KR10-2004-0069149 20040831
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
Provided is a method of fabricating a laser diode. Embodiments of the method include sequentially forming at least a lower clad layer, a resonance layer, an upper clad layer, an upper contact layer, an upper electrode layer, and a sacrificial layer on a substrate; forming a ridge portion by etching the sacrificial layer, the upper electrode layer, the upper contact layer, and a predetermined depth of the upper clad layer; exposing both top surfaces of the upper contact layer and both bottom surfaces of the sacrificial layer corresponding thereto by etching portions of the upper electrode layer, which are exposed on both sides of the ridge portion; forming a buried layer having an opening that exposes at least a portion of the bottom surface of the sacrificial layer, the buried layer formed on the surface of the ridge portion and the top surface of the upper clad layer that extends from the ridge portion; and removing the sacrificial layer and a portion of the buried layer disposed thereon by supplying an etchant through the opening.
公开/授权文献
- US20060045155A1 Method of fabricating laser diode 公开/授权日:2006-03-02