发明授权
US07344984B2 Technique for enhancing stress transfer into channel regions of NMOS and PMOS transistors
有权
用于增强应力传递到NMOS和PMOS晶体管的沟道区域的技术
- 专利标题： Technique for enhancing stress transfer into channel regions of NMOS and PMOS transistors
- 专利标题（中）： 用于增强应力传递到NMOS和PMOS晶体管的沟道区域的技术
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申请号： US11468450申请日： 2006-08-30
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公开(公告)号： US07344984B2公开(公告)日： 2008-03-18
- 发明人: Jan Hoentschel , Andy Wei , Markus Lenski , Peter Javorka
- 申请人： Jan Hoentschel , Andy Wei , Markus Lenski , Peter Javorka
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102005057073 20051130
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/4763
摘要：
A method and a semiconductor device are provided in which respective contact layers having a specific intrinsic stress may be directly formed on respective metal silicide regions without undue metal silicide degradation during an etch process for removing an unwanted portion of an initially deposited contact layer. Moreover, due to the inventive concept, the strain-inducing contact layers may be formed directly on the respective substantially L-shaped spacer elements, thereby enhancing even more the stress transfer mechanism.
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