发明授权
- 专利标题： Semiconductor device manufacturing method, wafer, and wafer manufacturing method
- 专利标题（中）： 半导体器件制造方法，晶片和晶片制造方法
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申请号： US11120981申请日： 2005-05-04
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公开(公告)号： US07345003B2公开(公告)日： 2008-03-18
- 发明人: Takae Sukegawa , Ryou Nakamura
- 申请人： Takae Sukegawa , Ryou Nakamura
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP.
- 优先权： JP2004-374317 20041224
- 主分类号： H01L21/26
- IPC分类号： H01L21/26
摘要：
A semiconductor device manufacturing method capable of making in-plane temperature distribution on a wafer uniform at heat treatment time. Before heat treatment is performed by irradiating the wafer with lamp light from the side of a device formed area where semiconductor devices are to be formed, an SiN film with certain thickness the reflection factor of which is equal to the average reflection factor of the device formed area is formed in an edge portion outside the device formed area. By doing so, reflection factors on the surface of the wafer irradiated with lamp light can be made uniform and uniform temperature distribution on the wafer can be obtained at heat treatment time. As a result, in-plane variations in the characteristics of semiconductor devices on the wafer can be made small and high-quality semiconductor devices can be manufactured.