发明授权
- 专利标题： Integrated circuit having a top side wafer contact and a method of manufacture therefor
- 专利标题（中）： 具有顶侧晶片接触的集成电路及其制造方法
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申请号： US11195283申请日： 2005-08-02
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公开(公告)号： US07345343B2公开(公告)日： 2008-03-18
- 发明人: Tony T. Phan , William C. Loftin , John Lin , Philip L. Hower
- 申请人： Tony T. Phan , William C. Loftin , John Lin , Philip L. Hower
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 W. James Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L21/84
- IPC分类号： H01L21/84
摘要：
The present invention provides an integrated circuit and a method of manufacture therefore. The integrated circuit (100, 1000), in one embodiment without limitation, includes a dielectric layer (120, 1020) located over a wafer substrate (110, 1010), and a semiconductor substrate (130, 1030) located over the dielectric layer (120, 1020), the semiconductor substrate (130, 1030) having one or more transistor devices (140, 1040) located therein or thereon. The integrated circuit (100, 1000) may further include an interconnect (170, 1053) extending entirely through the semiconductor substrate (130, 1030) and the dielectric layer (120, 1020), thereby electrically contacting the wafer substrate (110, 1010).
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