发明授权
US07345527B2 Ultra wideband filter based on a pair of cross-coupled transistors
有权
基于一对交叉耦合晶体管的超宽带滤波器
- 专利标题: Ultra wideband filter based on a pair of cross-coupled transistors
- 专利标题(中): 基于一对交叉耦合晶体管的超宽带滤波器
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申请号: US11343976申请日: 2006-02-01
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公开(公告)号: US07345527B2公开(公告)日: 2008-03-18
- 发明人: Eun-chul Park , Han-seung Lee , Gyu-hyung Cho , Hee-seok Han
- 申请人: Eun-chul Park , Han-seung Lee , Gyu-hyung Cho , Hee-seok Han
- 申请人地址: KR Suwon
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR10-2005-0010865 20050204
- 主分类号: H03K5/00
- IPC分类号: H03K5/00
摘要:
An ultra wideband filter is provided that filters an input signal using a pair of cross-coupled transistors with a small size and small power consumption. The ultra wideband filter includes a reference current generator unit generating a reference current using a bias signal of a predetermined level, a transconductor unit that is biased by the reference current and converts a predetermined input voltage into a current of a predetermined amount to output the current if the input voltage is applied thereto, and a filter unit that outputs a predetermined output voltage corresponding to the output current of the transconductor unit using a plurality of cross-coupled transistors and capacitors. The filter unit may include cross-coupled nMOS and pMOS transistors, and first and second capacitors respectively connected to respective drain terminals of the nMOS and pMOS transistors. Accordingly, the ultra wideband filter can be designed in a minimum size.
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