发明授权
US07346090B2 Vertical cavity surface emitting laser including trench and proton implant isolation
有权
垂直腔表面发射激光器包括沟槽和质子注入隔离
- 专利标题: Vertical cavity surface emitting laser including trench and proton implant isolation
- 专利标题(中): 垂直腔表面发射激光器包括沟槽和质子注入隔离
-
申请号: US11554473申请日: 2006-10-30
-
公开(公告)号: US07346090B2公开(公告)日: 2008-03-18
- 发明人: Ralph H. Johnson , R. Scott Penner , James Robert Biard
- 申请人: Ralph H. Johnson , R. Scott Penner , James Robert Biard
- 申请人地址: US CA Sunnyvale
- 专利权人: Finisar Corporation
- 当前专利权人: Finisar Corporation
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Workman Nydegger
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
A VCSEL with nearly planar intracavity contact. A bottom DBR mirror is formed on a substrate. A first conduction layer region is formed on the bottom DBR mirror. An active layer, including quantum wells, is on the first conduction layer region. A trench is formed into the active layer region. The trench is formed in a wagon wheel configuration with spokes providing mechanical support for the active layer region. The trench is etched approximately to the first conduction layer region. Proton implants are provided in the wagon wheel and configured to render the spokes of the wagon wheel insulating. A nearly planar electrical contact is formed as an intracavity contact for connecting the bottom of the active region to a power supply. The nearly planar electrical contact is formed in and about the trench.